JPS6150394B2 - - Google Patents

Info

Publication number
JPS6150394B2
JPS6150394B2 JP54045538A JP4553879A JPS6150394B2 JP S6150394 B2 JPS6150394 B2 JP S6150394B2 JP 54045538 A JP54045538 A JP 54045538A JP 4553879 A JP4553879 A JP 4553879A JP S6150394 B2 JPS6150394 B2 JP S6150394B2
Authority
JP
Japan
Prior art keywords
layer
region
gate
mask
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54045538A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54157089A (en
Inventor
Batsusausu Aanesuto
Hangu Ningu Tatsuku
Moorisu Ozubaan Kaaruton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS54157089A publication Critical patent/JPS54157089A/ja
Publication of JPS6150394B2 publication Critical patent/JPS6150394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Non-Volatile Memory (AREA)
JP4553879A 1978-05-30 1979-04-16 Method of fabricating short channel transistor structure Granted JPS54157089A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/910,254 US4173818A (en) 1978-05-30 1978-05-30 Method for fabricating transistor structures having very short effective channels

Publications (2)

Publication Number Publication Date
JPS54157089A JPS54157089A (en) 1979-12-11
JPS6150394B2 true JPS6150394B2 (en]) 1986-11-04

Family

ID=25428531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4553879A Granted JPS54157089A (en) 1978-05-30 1979-04-16 Method of fabricating short channel transistor structure

Country Status (6)

Country Link
US (1) US4173818A (en])
EP (1) EP0005720B1 (en])
JP (1) JPS54157089A (en])
CA (1) CA1115855A (en])
DE (1) DE2965709D1 (en])
IT (1) IT1166779B (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430991U (en]) * 1987-08-19 1989-02-27

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214359A (en) * 1978-12-07 1980-07-29 Bell Telephone Laboratories, Incorporated MOS Devices having buried terminal zones under local oxide regions
CA1138571A (en) * 1978-12-15 1982-12-28 Wolfgang M. Feist Semiconductor structures and manufacturing methods
DE2912535C2 (de) * 1979-03-29 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines MIS-Feldeffekt-Transistors mit einstellbarer, extrem kurzer Kanallänge
US4294002A (en) * 1979-05-21 1981-10-13 International Business Machines Corp. Making a short-channel FET
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array
US4354307A (en) * 1979-12-03 1982-10-19 Burroughs Corporation Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
US4329186A (en) * 1979-12-20 1982-05-11 Ibm Corporation Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices
US4343082A (en) * 1980-04-17 1982-08-10 Bell Telephone Laboratories, Incorporated Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device
USRE32613E (en) * 1980-04-17 1988-02-23 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making contact electrodes to silicon gate, and source and drain regions, of a semiconductor device
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
NL8202686A (nl) * 1982-07-05 1984-02-01 Philips Nv Werkwijze ter vervaardiging van een veldeffektinrichting met geisoleerde stuurelektrode, en inrichting vervaardigd volgens de werkwijze.
DE3340560A1 (de) * 1983-11-09 1985-05-15 Siemens AG, 1000 Berlin und 8000 München Verfahren zum gleichzeitigen herstellen von schnellen kurzkanal- und spannungsfesten mos-transistoren in vlsi-schaltungen
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
JPS62274767A (ja) * 1986-05-23 1987-11-28 Fujitsu Ltd 高耐圧半導体装置及びその製造方法
US5198380A (en) * 1988-06-08 1993-03-30 Sundisk Corporation Method of highly compact EPROM and flash EEPROM devices
US4906588A (en) * 1988-06-23 1990-03-06 Dallas Semiconductor Corporation Enclosed buried channel transistor
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
JPH0734475B2 (ja) * 1989-03-10 1995-04-12 株式会社東芝 半導体装置
JP2708596B2 (ja) * 1990-01-31 1998-02-04 キヤノン株式会社 記録ヘッドおよびインクジェット記録装置
JP2545762B2 (ja) * 1990-04-13 1996-10-23 日本電装株式会社 高耐圧ｍｉｓトランジスタおよびこのトランジスタを有する相補型トランジスタの製造方法
US5244823A (en) * 1991-05-21 1993-09-14 Sharp Kabushiki Kaisha Process for fabricating a semiconductor device
US5648288A (en) * 1992-03-20 1997-07-15 Siliconix Incorporated Threshold adjustment in field effect semiconductor devices
US5248627A (en) * 1992-03-20 1993-09-28 Siliconix Incorporated Threshold adjustment in fabricating vertical dmos devices
JP3272517B2 (ja) * 1993-12-01 2002-04-08 三菱電機株式会社 半導体装置の製造方法
JP3221766B2 (ja) * 1993-04-23 2001-10-22 三菱電機株式会社 電界効果トランジスタの製造方法
DE4340592C2 (de) * 1993-11-29 2002-04-18 Gold Star Electronics Verfahren zum Herstellen eines nichtflüchtigen Halbleiterspeichers und einen nach diesem Verfahren hergestellten Halbleiterspeicher
US5677215A (en) * 1993-11-17 1997-10-14 Lg Semicon Co., Ltd. Method of fabricating a nonvolatile semiconductor memory device
EP0789401A3 (en) * 1995-08-25 1998-09-16 Matsushita Electric Industrial Co., Ltd. LD MOSFET or MOSFET with an integrated circuit containing thereof and manufacturing method
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5681761A (en) * 1995-12-28 1997-10-28 Philips Electronics North America Corporation Microwave power SOI-MOSFET with high conductivity metal gate
US6417550B1 (en) * 1996-08-30 2002-07-09 Altera Corporation High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
US6121666A (en) * 1997-06-27 2000-09-19 Sun Microsystems, Inc. Split gate oxide asymmetric MOS devices
US6093951A (en) * 1997-06-30 2000-07-25 Sun Microsystems, Inc. MOS devices with retrograde pocket regions
US5923987A (en) * 1997-06-30 1999-07-13 Sun Microsystems, Inc. Method for forming MOS devices with retrograde pocket regions and counter dopant regions at the substrate surface
US6249027B1 (en) 1998-06-08 2001-06-19 Sun Microsystems, Inc. Partially depleted SOI device having a dedicated single body bias means
RU2144216C1 (ru) * 1998-10-09 2000-01-10 Закрытое акционерное общество "АВ - ТЕХНОЛОГИЯ" Способ защиты от подделки ценных изделий
US7927939B2 (en) * 2000-01-05 2011-04-19 Agere Systems Inc. Method of manufacturing a laterally diffused metal oxide semiconductor device
TW506079B (en) 2000-02-17 2002-10-11 Koninkl Philips Electronics Nv A method of manufacturing a semiconductor device
JP2008147576A (ja) * 2006-12-13 2008-06-26 Sumitomo Electric Ind Ltd 半導体装置の製造方法
US9029132B2 (en) 2009-08-06 2015-05-12 International Business Machines Corporation Sensor for biomolecules
US8052931B2 (en) 2010-01-04 2011-11-08 International Business Machines Corporation Ultra low-power CMOS based bio-sensor circuit
US9068935B2 (en) * 2010-04-08 2015-06-30 International Business Machines Corporation Dual FET sensor for sensing biomolecules and charged ions in an electrolyte
US8753948B2 (en) * 2011-10-31 2014-06-17 Freescale Semiconductor, Inc. Methods of forming laterally diffused metal oxide semiconductor transistors for radio frequency power amplifiers

Family Cites Families (3)

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GB1233545A (en]) * 1967-08-18 1971-05-26
US3996657A (en) * 1974-12-30 1976-12-14 Intel Corporation Double polycrystalline silicon gate memory device
US4033026A (en) * 1975-12-16 1977-07-05 Intel Corporation High density/high speed MOS process and device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430991U (en]) * 1987-08-19 1989-02-27

Also Published As

Publication number Publication date
EP0005720B1 (fr) 1983-06-22
CA1115855A (en) 1982-01-05
DE2965709D1 (en) 1983-07-28
US4173818A (en) 1979-11-13
EP0005720A1 (fr) 1979-12-12
IT7922199A0 (it) 1979-04-27
IT1166779B (it) 1987-05-06
JPS54157089A (en) 1979-12-11

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